Small 13(9), 1602702 (2017)Ībd El-Fattah, H.A., El-Mahallawi, I., Shazly, M.H., Khalifa, W.A.: Microstructure evolution of NiTi magnetron sputtered thin film on different substrates. Song, R., Krasia-Christoforou, T., Debus, C., Cölfen, H.: Structure and magnetic property control of copper hydroxide acetate by non-classical crystallization. Niederberger, M., Cölfen, H.: Oriented attachment and mesocrystals: non-classical crystallization mechanisms based on nanoparticle assembly. Jehannin, M., Rao, A., Cölfen, H.: New horizons of nonclassical crystallization. Gebauer, D., Völkel, A., Cölfen, H.: Stable prenucleation calcium carbonate clusters. Wiley, England (2008)ĭe Yoreo, J.J., Gilbert, P.U.P.A., Sommerdijk, N.A.J.M., Penn, R.L., Whitelam, S., Joester, D., Zhang, H., Rimer, J.D., Navrotsky, A., Banfield, J.F., Wallace, A.F., Michel, F.M., Meldrum, F.C., Cölfen, H., Dove, P.M.: Crystallization by particle attachment in synthetic, biogenic, and geologic environments. World Scientific (2003)Ĭölfen, H.: Mesocrystals and Nonclassical Crystallization. Markov, I.V.: Crystal Growth for Beginners. This change in the deposition behavior of the Ag film can be understood as the effect of the charged flux. The film resistivity had the same tendency.
Flux power not working full#
As the working pressure decreased, the crystallinity of the deposited films increased by the positive bias whereas it decreased by the negative bias, which is indicated by the full width at half maximum (FWHM) determined by X-ray diffraction of the Ag (111) peak. Considering the change of the film growth rate according to the bias, the amount of negatively charged flux was estimated to be roughly 10%. The bias effect was enhanced as the working pressure decreased.
For example, the film thicknesses were 345.7, 377.9, and 416.0 nm at − 300, 0, and + 300 V, respectively, at a sputtering power of 100 W and a working pressure of 2.5 mTorr. Under all sputtering powers, the growth rate of the thin film was increased by the positive bias, whereas it was decreased by the negative bias. Thin films were deposited on the substrate under the electric biases of − 300, 0, and + 300 V for 30 min with sputtering powers of 20, 50, 100, and 200 W and working pressures of 2.5, 5, 10, and 20 mTorr. Effects of sputtering power, working pressure, and bias on the growth rate, crystallinity, and resistivity of Ag thin films deposited by direct current (DC) magnetron sputtering were investigated.
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